Mie Resonances, Infrared Emission, and the Band Gap of InN
Identifieur interne : 000415 ( Russie/Analysis ); précédent : 000414; suivant : 000416Mie Resonances, Infrared Emission, and the Band Gap of InN
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Abstract
Mie resonances due to scattering or absorption of light in InN-containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than the currently accepted 0.7 eV. Microcathodoluminescence studies complemented by the imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises in a close vicinity of In inclusions and is likely associated with surface states at the metal/InN interfaces.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Mie Resonances, Infrared Emission, and the Band Gap of InN</title><author><name sortKey="Shubina, T V" uniqKey="Shubina T">T. V. Shubina</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Ivanov, S V" uniqKey="Ivanov S">S. V. Ivanov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Jmerik, V N" uniqKey="Jmerik V">V. N. Jmerik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Solnyshkov, D D" uniqKey="Solnyshkov D">D. D. Solnyshkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Vekshin, V A" uniqKey="Vekshin V">V. A. Vekshin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kopev, P S" uniqKey="Kopev P">P. S. Kopev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Vasson, A" uniqKey="Vasson A">A. Vasson</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>LASMEA-UMR 6602 CNRS-UBP, 63177 AUBIERE CEDEX, France</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>LASMEA-UMR 6602 CNRS-UBP, 63177 AUBIERE CEDEX</wicri:regionArea><placeName><region type="region" nuts="2">Auvergne</region><settlement type="city">AUBIERE</settlement></placeName></affiliation></author><author><name sortKey="Leymarie, J" uniqKey="Leymarie J">J. Leymarie</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>LASMEA-UMR 6602 CNRS-UBP, 63177 AUBIERE CEDEX, France</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>LASMEA-UMR 6602 CNRS-UBP, 63177 AUBIERE CEDEX</wicri:regionArea><placeName><region type="region" nuts="2">Auvergne</region><settlement type="city">AUBIERE</settlement></placeName></affiliation></author><author><name sortKey="Kavokin, A" uniqKey="Kavokin A">A. Kavokin</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>LASMEA-UMR 6602 CNRS-UBP, 63177 AUBIERE CEDEX, France</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>LASMEA-UMR 6602 CNRS-UBP, 63177 AUBIERE CEDEX</wicri:regionArea><placeName><region type="region" nuts="2">Auvergne</region><settlement type="city">AUBIERE</settlement></placeName></affiliation></author><author><name sortKey="Amano, H" uniqKey="Amano H">H. Amano</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502</wicri:regionArea><wicri:noRegion>Nagoya 468-8502</wicri:noRegion></affiliation></author><author><name sortKey="Shimono, K" uniqKey="Shimono K">K. Shimono</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502</wicri:regionArea><wicri:noRegion>Nagoya 468-8502</wicri:noRegion></affiliation></author><author><name sortKey="Kasic, A" uniqKey="Kasic A">A. Kasic</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden</s1><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping</wicri:regionArea><wicri:noRegion>S-581 83 Linkoping</wicri:noRegion></affiliation></author><author><name sortKey="Monemar, B" uniqKey="Monemar B">B. Monemar</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden</s1><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping</wicri:regionArea><wicri:noRegion>S-581 83 Linkoping</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0144644</idno><date when="2004-03-19">2004-03-19</date><idno type="stanalyst">PASCAL 04-0144644 AIP</idno><idno type="RBID">Pascal:04-0144644</idno><idno type="wicri:Area/Main/Corpus">00BC27</idno><idno type="wicri:Area/Main/Repository">00A681</idno><idno type="wicri:Area/Russie/Extraction">000415</idno></publicationStmt><seriesStmt><idno type="ISSN">0031-9007</idno><title level="j" type="abbreviated">Phys. rev. lett.</title><title level="j" type="main">Physical review letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathodoluminescence</term><term>Energy gap</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light scattering</term><term>Mie scattering</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7830</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Bande interdite</term><term>Cathodoluminescence</term><term>Diffusion lumière</term><term>Diffusion Mie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Mie resonances due to scattering or absorption of light in InN-containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than the currently accepted 0.7 eV. Microcathodoluminescence studies complemented by the imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises in a close vicinity of In inclusions and is likely associated with surface states at the metal/InN interfaces.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0031-9007</s0></fA01><fA02 i1="01"><s0>PRLTAO</s0></fA02><fA03 i2="1"><s0>Phys. rev. lett.</s0></fA03><fA05><s2>92</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Mie Resonances, Infrared Emission, and the Band Gap of InN</s1></fA08><fA11 i1="01" i2="1"><s1>SHUBINA (T. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>IVANOV (S. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>JMERIK (V. N.)</s1></fA11><fA11 i1="04" i2="1"><s1>SOLNYSHKOV (D. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>VEKSHIN (V. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>KOPEV (P. S.)</s1></fA11><fA11 i1="07" i2="1"><s1>VASSON (A.)</s1></fA11><fA11 i1="08" i2="1"><s1>LEYMARIE (J.)</s1></fA11><fA11 i1="09" i2="1"><s1>KAVOKIN (A.)</s1></fA11><fA11 i1="10" i2="1"><s1>AMANO (H.)</s1></fA11><fA11 i1="11" i2="1"><s1>SHIMONO (K.)</s1></fA11><fA11 i1="12" i2="1"><s1>KASIC (A.)</s1></fA11><fA11 i1="13" i2="1"><s1>MONEMAR (B.)</s1></fA11><fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>LASMEA-UMR 6602 CNRS-UBP, 63177 AUBIERE CEDEX, France</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="03"><s1>Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden</s1><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA20><s2>117407-117407-4</s2></fA20><fA21><s1>2004-03-19</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>8895</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0144644</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Mie resonances due to scattering or absorption of light in InN-containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than the currently accepted 0.7 eV. 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